Datasheet Details
| Part number | STP9NM60N |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 551.96 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STP9NM60N Datasheet
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General Description
This series of devices is realized with the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
- Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A.
- 100% avalanche tested.
- Low input capacitance and gate charge.
- Low gate input resistance.
