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STPS20S100C Datasheet

POWER SCHOTTKY RECTIFIER

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STPS20S100C
100 V, 20 A power Schottky rectifier
Features
High junction temperature capability for
converters located in confined enrironment
Low leakage current at high temperature
Low static and dynamic losses as a result of the
Schottky barrier
Avalanche specification
Description
Schottky barrier rectifier designed for high
frequency miniature switched mode power
supplies such as adaptators and on board dc/dc
converters. The device is packaged in TO-220AB,
I2PAK and TO-220FPAB.
A1
K
A2
K
A2
A1 K
TO-220AB
STPS20S100CT
A2
K
A1
TO-220FPAB
STPS20S100CFP
K
A2
K
A1
I2PAK
STPS20S100CR
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj
VF(max)
2 x 10 A
100 V
175 °C
0.71 V
February 2010
Doc ID 11281 Rev 2
1/9
www.st.com
9


STMicroelectronics Electronic Components Datasheet

STPS20S100C Datasheet

POWER SCHOTTKY RECTIFIER

No Preview Available !

Characteristics
1 Characteristics
STPS20S100C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward
current δ = 0.5
TO-220AB / I2PAK
TO-220FPAB
Tc = 150 °C
Tc = 140 °C
Per diode
Per device
Per diode
Per device
100
30
10
20
10
20
IFSM Surge non repetitive forward current tp = 10ms sinusoidal
180
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25 °C
7200
Tstg Storage temperature range
Tj Maximum operating junction temperature (1)
-65 to + 175
175
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
Rth(j-c)
Rth(c)
Junction to case
Rth(j-c) Junction to case
TO-220AB / I2PAK
TO-220FPAB
Per diode
Total
Coupling
Per diode
Total
2.2
1.3
0.3
4.5
3.5
Rth(c)
Coupling
2.5
When the diodes 1 and 2 are used simultaneously:
Δ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Unit
V
A
A
A
W
°C
°C
V/µs
Unit
°C/W
°C/W
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1)
Reverse leakage
current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
3.5 µA
1.3 4.5 mA
Tj = 25 °C
Tj = 125 °C
IF = 5 A
0.73
0.57 0.61
VF (2)
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
IF = 10 A
0.85
0.66 0.71
V
Tj = 25 °C
Tj = 125 °C
IF = 20 A
0.94
0.74 0.80
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.009 IF2(RMS)
2/9 Doc ID 11281 Rev 2


Part Number STPS20S100C
Description POWER SCHOTTKY RECTIFIER
Maker STMicroelectronics
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STPS20S100C Datasheet PDF





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