Characteristics
1
Characteristics
STPS30L60C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current
TO-220AB narrow leads,
TO-220AB, I2PAK, D2PAK,
TO-247, δ = 0.5
TO-220FPAB, δ = 0.5
IFSM Surge non repetitive forward current
IRRM Repetitive peak reverse current
PARM(1) Repetitive peak avalanche power
VARM (2) Maximum repetitive peak avalanche voltage
VASM (2) Maximum single pulse peak avalanche voltage
Tstg
Tj
dV/dt
Storage temperature range
Maximum operating junction temperature(3)
Critical rate of rise reverse voltage
60
V
30
A
Per diode
Tc = 130 °C Per device
Per diode
Tc = 110 °C Per device
tp = 10 ms, sinusoidal
tp = 2 µs square, F = 1
kHz
tp = 1 µs, Tj = 25 °C
tp < 1 µs, Tj < 150 °C,
IAR < 29 A
tp < 1 µs, Tj < 150 °C,
IAR < 29 A
15
30
A
15
30
230
A
2
A
7800
W
80
V
80
V
-65 to + 175 °C
150
°C
10000 V/µs
1. For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 12.
3.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Rth(c) Coupling
TO-220AB narrow leads,
Per diode
TO-220AB, I2PAK, D2PAK, TO-247 Total
TO-220FPAB
Per diode
Total
TO-220AB narrow leads, TO-220AB, I2PAK,
D2PAK, TO-247
TO-220FPAB
1.5
0.8
4.7
3.95
°C/W
0.1
3.2
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)
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Doc ID 6479 Rev 10
