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STPS30SM100S Datasheet

Power Schottky rectifier

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STPS30SM100S
Power Schottky rectifier
Features
High current capability
Avalanche rated
Low forward voltage drop current
High frequency operation
Insulated package:
– Insulation voltage 2000 V rms
– Package capacitance = 12 pF
Description
This single Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB, TO-220AB narrow leads,
TO-220FPAB, D2PAK and I2PAK, this device is
intended to be used in notebook, game station
and desktop adaptors, providing in these
applications a good efficiency at both low and
high load.
Figure 1. Electrical characteristics (a)
VI
"Forward"
I
2 x IO
X
VRRM
VAR VR
IF
IO
IR
X
V
"Reverse"
VTo VF(Io) VF VF(2xIo)
IAR
A(1)
A(3)
K
A
AK
TO-220AB
STPS30SM100ST
K(2)
A
AK
I2PAK
STPS30SM100SR
K
A
AK
TO-220FPAB
STPS30SM100SFP
A
A
D2PAK
STPS30SM100SG-TR
K
A
AK
TO-220AB narrow leads
STPS30SM100STN
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
VF(typ)
30 A
100 V
150 °C
0.420 V
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 13. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
September 2011
Doc ID 15517 Rev 4
1/11
www.st.com
11


STMicroelectronics Electronic Components Datasheet

STPS30SM100S Datasheet

Power Schottky rectifier

No Preview Available !

Characteristics
1 Characteristics
STPS30SM100S
Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF(AV)
IFSM
PARM(1)
VARM (2)
VASM (2)
Tstg
Tj
Repetitive peak reverse voltage
Forward current rms
Average forward current δ = 0.5
Surge non repetitive forward current
TO-220AB, TO-220AB narrow leads,
D2PAK, I2PAK, Tc = 125 °C
TO-220FPAB, Tc = 80 °C
tp = 10 ms sinusoidal,
terminals 1 and 3 short circuited
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
Maximum repetitive peak avalanche tp < 1 µs Tj < 150 °C
voltage
IAR < 53.8 A
Maximum single pulse peak
avalanche voltage
tp < 1 µs Tj < 150 °C
IAR < 53.8 A
Storage temperature range
Maximum operating junction temperature (3)
100 V
60 A
30 A
530
21500
120
A
W
V
120 V
-65 to + 175 °C
150 °C
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 13.
3. dPtot < 1 condition to avoid thermal runaway for a diode on its own heatsink
dTj Rth(j-a)
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
TO-220AB, TO-220AB narrow leads,
D2PAK, I2PAK
TO-220FPAB
1
°C/W
4
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol
Parameter
Test conditions
Min. Typ.
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 5 A
IF = 10A
IF = 30 A
15
500
420
600
505
780
630
To evaluate the conduction losses use the following equation:
P = 0.580 x IF(AV) + 0.0033 x IF2(RMS)
Max.
45
45
670
560
870
690
Unit
µA
mA
mV
2/11 Doc ID 15517 Rev 4


Part Number STPS30SM100S
Description Power Schottky rectifier
Maker ST Microelectronics
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