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STPS40L45C Datasheet

Low drop power Schottky rectifier

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STPS40L45C
Low drop power Schottky rectifier
A1
K
A2
K
A2
A1
D2PAK
STPS40L45CG
A2
A1K
TO-220AB
STPS40L45CT
A2
K
A1
TO-247
STPS40L45CW
Datasheet - production data
Description
Dual center tap Schottky barrier rectifier designed
for high frequency switched mode power supplies
and DC to DC converters.
Packaged in TO-220AB, TO-247 and D2PAK
these devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
Table 1. Device summary
IF(AV)
2 x 20 A
VRRM
45 V
Tj (max)
150° C
VF(max)
0.49 V
Features
Low forward voltage drop meaning very small
conduction losses
Low switching losses allowing high frequency
operation
Avalanche capability specified
October 2013
This is information on a product in full production.
DocID6857 Rev 5
1/11
www.st.com


STMicroelectronics Electronic Components Datasheet

STPS40L45C Datasheet

Low drop power Schottky rectifier

No Preview Available !

Characteristics
1
Characteristics
STPS40L45C
Table 2. Absolute Ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current
Tc =130° C
= 0.5
Per diode
Per device
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal
IRRM Repetitive peak reverse current
tp = 2 µs square F = 1 kHz
IRSM Non repetitive peak reverse current tp = 100 µs square
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25° C
Tstg Storage temperature range
Tj
Maximum operating junction temperature (1)
dV/dt Critical rate of rise of reverse voltage
1.
d----P-----t--o----t
dTj
R-----t--h-----1--j-------a----
condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink
45
V
30
A
20
40
A
220
A
2
A
3
A
8100
W
-65 to + 150 °C
150
°C
10000 V/µs
Symbol
Rth (j-c) Junction to case
Rth(c) Coupling
Table 3. Thermal resistances
Parameter
Per diode
Total
Value
1.5
0.8
0.1
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c).
Symbol
Table 4. Static electrical characteristics (per diode)
Parameter
Test Conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
Tj = 25° C
IF = 20 A
VF(1.) Forward voltage drop
Tj = 125° C
Tj = 25° C
IF = 20 A
IF = 40 A
Tj = 125° C
IF = 40 A
1. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.28 x IF(AV) + 0.0105 IF2(RMS)
0.6 mA
140 280 mA
0.53
0.42 0.49
V
0.69
0.6 0.7
2/11
DocID6857 Rev 5



Part Number STPS40L45C
Description Low drop power Schottky rectifier
Maker STMicroelectronics
Total Page 3 Pages
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STPS40L45C Datasheet PDF





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