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STMicroelectronics Electronic Components Datasheet

STPS40SM100C Datasheet

Power Schottky

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STPS40SM100C
Power Schottky rectifier
Features
High current capability
Avalanche rated
Low forward voltage drop current
High frequency operation
Description
Schottky rectifier, suited for high frequency switch
mode power supply.
Packaged in TO-220AB, D2PAK and I2PAK, this
device is intended to be used in notebook, game
station and desktop adaptors, providing in these
applications a good efficiency at both low and
high load.
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
VF(typ)
2 x 20 A
100 V
150 °C
0.435 V
A(1)
A(3)
K
A
AK
TO-220AB
STPS40SM100CT
K
K(2)
A
AK
I2PAK
STPS40SM100CR
A
A
D2PAK
STPS40SM100CG-TR
Figure 1. Electrical characteristics (a)
VI
"Forward"
I
2 x IO
X
VRRM
VAR VR
IF
IO
IR
X
V
"Reverse"
VTo VF(Io) VF VF(2xIo)
IAR
March 2009
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 11. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
Rev 1
1/9
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9


STMicroelectronics Electronic Components Datasheet

STPS40SM100C Datasheet

Power Schottky

No Preview Available !

Characteristics
1 Characteristics
STPS40SM100C
Table 2. Absolute ratings (limiting values)
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Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward current rms
IF(AV) Average forward current δ = 0.5
IFSM Surge non repetitive forward current
PARM(1) Repetitive peak avalanche power
VARM (2) Maximum repetitive peak avalanche voltage
VASM (2) Maximum single pulse peak avalanche voltage
Tstg Storage temperature range
Tj Maximum operating junction temperature (3)
Tc = 130 °C Per diode
Tc = 125 °C Per device
tp = 10 ms sinusoidal
tp = 1 µs Tj = 25 °C
tp < 1 µs Tj < 150 °C
IAR < 45 A
tp < 1 µs Tj < 150 °C
IAR < 45 A
100
60
20
40
530
18000
120
120
-65 to + 175
150
V
A
A
A
W
V
V
°C
°C
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 11.
3.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j-------a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
Rth(c) Coupling
Per diode
Total
1.3
0.7 °C/W
0.1
Table 4. Static electrical characteristics (per diode, at 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = 70 V
VR = 100 V
IF = 5 A
IF = 10A
IF = 20 A
7 µA
7 mA
13 45 µA
13 45 mA
520
435
620 700
mV
520 580
740 810
605 665
To evaluate the conduction losses use the following equation:
P = 0.580 x IF(AV) + 0.0043 x IF2(RMS)
2/9


Part Number STPS40SM100C
Description Power Schottky
Maker ST Microelectronics
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