Datasheet Details
| Part number | STPS80L30CY |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 149.98 KB |
| Description | LOW DROP POWER SCHOTTKY RECTIFIER |
| Download | STPS80L30CY Download (PDF) |
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| Part number | STPS80L30CY |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 149.98 KB |
| Description | LOW DROP POWER SCHOTTKY RECTIFIER |
| Download | STPS80L30CY Download (PDF) |
|
|
|
Dual center tap Schottky rectifier suited for CAD computers and servers.
Packaged in MAX247, this device is intended for use in low voltage, high frequency switching power supplies, free wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt * : Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 135 °C δ = 0.5 Per diode Per device Value 30 50 40 80 400 2 - 65 to + 150 150 10000 Unit V A A A A °C °C V/µs Max247 tp = 10 ms sinusoidal tp = 2 µs F = 1kHz square dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth(j−a) August 1999 - Ed: 1A 1/3 DataSheet 4 U .com www.DataSheet4U.com STPS80L30CY THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 0.7 0.5 0.3 Unit °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : * tp = 380 µs, δ < 2% Min.
www.DataSheet4U.com ® STPS80L30CY LOW DROP POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF.
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