STPS80L15CY
STPS80L15CY is LOW DROP OR-ing POWER SCHOTTKY RECTIFIER manufactured by STMicroelectronics.
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LOW DROP OR-ing POWER SCHOTTKY RECTIFIER
PRELIMINARY DATASHEET
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 40 A 15 V 125 °C 0.33 V
A1 K A2
Features
AND BENEFITS Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V AND 12V OR-ing EXTREMELY LOW VOLTAGE VOLTAGE DROP: 0.33V @ 100 °C OPERATING JUNCTION TEMPERATURE: 125 °C
K A1
A2
Max247
DESCRIPTION The STPS80L15CY uses proprietary barrier technology to optimize forward voltage drop for OR-ing functions in n-1 fault tolerant Switch Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj d V/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 110 °C δ = 0.5 Per diode Per device Value 15 50 40 80 400 2
- 65 to + 150 125 10000 Unit V A A A A °C °C V/µs
1/4 tp = 10 ms sinusoidal tp = 2 µs F = 1k Hz square
November 1999
- Ed: 4B
Data Sheet 4 U .
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THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 0.7 0.5 0.3 Unit °C/W
When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR
- Parameter Reverse leakage current Tests conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C VF
- Forward voltage drop Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C
Pulse test :
- tp = 380 µs, δ < 2%
Min.
Typ. 280
Max. 4 400 11 1.1 16 1.3 0.42 0.33 0.55 0.46
Unit m A
VR = 5V VR = 12V 0.44 VR = 15V 0.53 IF = 40 A IF = 40 A IF = 80 A IF = 80 A 0.40 0.30
A m A A...
