STPS80L30CY
STPS80L30CY is LOW DROP POWER SCHOTTKY RECTIFIER manufactured by STMicroelectronics.
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LOW DROP POWER SCHOTTKY RECTIFIER
PRELIMINARY DATASHEET
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) Features
AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE
A1
2 x 40 A 30 V 150 °C 0.38 V
A1 K A2
A2 K
DESCRIPTION Dual center tap Schottky rectifier suited for CAD puters and servers. Packaged in MAX247, this device is intended for use in low voltage, high frequency switching power supplies, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj d V/dt
- : Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 135 °C δ = 0.5 Per diode Per device Value 30 50 40 80 400 2
- 65 to + 150 150 10000 Unit V A A A A °C °C V/µs
Max247 tp = 10 ms sinusoidal tp = 2 µs F = 1k Hz square d Ptot 1 < thermal runaway condition for a diode on its own heatsink d Tj Rth(j- a)
August 1999
- Ed: 1A
1/3
Data Sheet 4 U .
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THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 0.7 0.5 0.3 Unit °C/W
When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR
- VF
- Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test :
- tp = 380 µs, δ < 2%
Min.
Typ. 0.7
Max. 4 1.5 0.48 0.38 0.58 0.53
Unit m A A V
VR = VRRM IF = 40 A IF = 40 A IF = 80 A IF = 80 A 0.48...
