| Part number | STPSC1006D |
|---|---|
| Datasheet | STPSC1006D_STMicroelectronics.pdf |
| File Size | 114.40 KB |
| Manufacturer | STMicroelectronics |
| Description | 600 V power Schottky silicon carbide diode |
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The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
STPSC1006 | Schottky silicon carbide diode | ST Microelectronics |
See all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STPSC10065 | Schottky silicon carbide diode |
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| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065BY-TR | Schottky silicon carbide diode |
| STPSC10H065DLF | power Schottky silicon carbide diode |
| STPSC10H065G2 | high surge silicon carbide power Schottky diode |
| STPSC10H12 | power Schottky silicon carbide diode |
| STPSC10H12-Y | Automotive grade 1200V power Schottky silicon carbide diode |
| STPSC10H12G2Y-TR | silicon carbide power Schottky diode |
