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STPSC1006 Datasheet Schottky Silicon Carbide Diode

Manufacturer: STMicroelectronics

Overview: STPSC1006 600 V power Schottky silicon carbide diode.

General Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 600 V rating.

Key Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Particularly suitable in PFC boost diode function.

STPSC1006 Distributor