Datasheet4U Logo Datasheet4U.com

STPSC1006 - Schottky silicon carbide diode

General Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 600 V rating.

Key Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Particularly suitable in PFC boost diode function.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STPSC10065 Schottky silicon carbide diode STMicroelectronics
STPSC10065DLF power Schottky silicon carbide diode STMicroelectronics
STPSC1006D 600 V power Schottky silicon carbide diode STMicroelectronics
STPSC10H065 power Schottky silicon carbide diode STMicroelectronics
STPSC10H065-Y Automotive 650V power Schottky silicon carbide diode STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STPSC1206 600V power Schottky silicon carbide diode
STPSC406 600V power Schottky silicon carbide diode
STPSC606 Schottky Barrier 600 V power Schottky silicon carbide diode
STPSC806 Schottky Barrier 600 V power Schottky silicon carbide diode
STPS0520M LOW DROP POWER SCHOTTKY RECTIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STPSC1006 600 V power Schottky silicon carbide diode Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. A K TO-220AC STPSC1006D K A NC D2PAK STPSC1006G Table 1.