STPSC10065
Overview
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate.
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- Operating Tj from -40 °C to 175 °C
- D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
- ECOPACK2 compliant component
