STMicroelectronics STPSC10065
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC10065 |
|---|---|
| Datasheet | STPSC10065 Download |
| Manufacturer |  STMicroelectronics |
| Description | Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● No or negligible reverse recovery● Switching behavior independent of temperature
● Dedicated to PFC applications
● High forward surge capability
● Operating Tj from -40 °C to 175 °C
● D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
● ECOPACK2 compliant component
APPLICATIONS
● DC/DC converter● High frequency inverter
● Snubber
● Boost PFC function
DESCRIPTION
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1. Product status link STPSC10065 Product summary Symbol Value IF(AV) 10 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V DS12185 - Rev 3 - March 2021 For further information contact your local STMicroelectronics sales office.
