Datasheet Summary
650 V, 10 A low VF power Schottky silicon carbide diode
TO-220AC
AA NC
D²PAK HV
Product label
Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- Operating Tj from -40 °C to 175 °C
- D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
- ECOPACK2 pliant ponent
Applications
- DC/DC converter
- High frequency inverter
- Snubber
- Boost PFC function
Description
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the...