Datasheet Details
| Part number | STPSC1006D |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 114.40 KB |
| Description | 600 V power Schottky silicon carbide diode |
| Datasheet | STPSC1006D_STMicroelectronics.pdf |
|
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Overview: www.DataSheet4U.com STPSC1006D 600 V power Schottky silicon carbide.
| Part number | STPSC1006D |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 114.40 KB |
| Description | 600 V power Schottky silicon carbide diode |
| Datasheet | STPSC1006D_STMicroelectronics.pdf |
|
|
|
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
STPSC1006 | Schottky silicon carbide diode | ST Microelectronics |
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