STPSC1006D Overview
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
STPSC1006D Details
| Part number | STPSC1006D |
|---|---|
| Datasheet | STPSC1006D Datasheet PDF (Download) |
| File Size | 114.40 KB |
| Manufacturer | STMicroelectronics |
| Description | 600 V power Schottky silicon carbide diode |
|
|
