STPSC10H065G2 Datasheet high surge silicon carbide power Schottky diode

Manufacturer: STMicroelectronics

Overview: STPSC10H065G2 Datasheet 650 V, 10 A high surge silicon carbide power Schottky diode A K K A A NC D²PAK HV Product label Product status STPSC10H065G2 Product summary Symbol Value IF(AV) 10 A VRRM 650 V Tj(max.) 175 °C VF(typ.) 1.

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STPSC10H065G2 high surge silicon carbide power schottky diode by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STPSC10H065G2
Manufacturer	STMicroelectronics
File Size	377.74 KB
Description	high surge silicon carbide power Schottky diode
Download	STPSC10H065G2 Download (PDF)

General Description

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

No or negligible reverse recovery.
Switching behavior independent of temperature.
High forward surge capability.
Operating Tj from -40 °C to 175 °C.
Power efficient product.
D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
ECOPACK2 compliant component.

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