STPSC10H065G2 Description
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC10H065G2 Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- High forward surge capability
- Operating Tj from -40 °C to 175 °C
- Power efficient product
- D²PAK HV creepage distance (anode to cathode) = 5.38 mm min
- ECOPACK2 pliant ponent