Datasheet Details
| Part number | STPSC10H065BY-TR |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 343.28 KB |
| Description | Schottky silicon carbide diode |
| Datasheet | STPSC10H065BY-TR-STMicroelectronics.pdf |
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Overview: A K Product status STPSC10H065BY-TR Product summary Symbol Value IF(AV) 10 A VRRM 650 V T j(max.
| Part number | STPSC10H065BY-TR |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 343.28 KB |
| Description | Schottky silicon carbide diode |
| Datasheet | STPSC10H065BY-TR-STMicroelectronics.pdf |
|
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The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
| Part Number | Description |
|---|---|
| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065DLF | power Schottky silicon carbide diode |
| STPSC10H065G2 | high surge silicon carbide power Schottky diode |
| STPSC10H12 | power Schottky silicon carbide diode |
| STPSC10H12-Y | Automotive grade 1200V power Schottky silicon carbide diode |
| STPSC10H12G2Y-TR | silicon carbide power Schottky diode |
| STPSC10065 | Schottky silicon carbide diode |
| STPSC10065DLF | power Schottky silicon carbide diode |
| STPSC1006D | 600 V power Schottky silicon carbide diode |