Datasheet Details
| Part number | STPSC10H065BY-TR |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 343.28 KB |
| Description | Schottky silicon carbide diode |
| Datasheet |
 STPSC10H065BY-TR Datasheet
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| Part number | STPSC10H065BY-TR |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 343.28 KB |
| Description | Schottky silicon carbide diode |
| Datasheet |
STPSC10H065BY-TR Datasheet
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The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.