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STPSC10H065BY-TR - Schottky silicon carbide diode

General Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • AEC-Q101 qualified.
  • No reverse recovery charge in.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A K Product status STPSC10H065BY-TR Product summary Symbol Value IF(AV) 10 A VRRM 650 V T j(max.) 175 °C STPSC10H065BY-TR Datasheet Automotive 650 V power Schottky silicon carbide diode Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • ECOPACK compliant component Applications • On board charger (OBC) • Solar boost PFC • Telecom power equipment • Charging stations Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.