Datasheet Summary
Product status STPSC10H065BY-TR
Product summary
Symbol
Value
IF(AV)
10 A
VRRM
650 V
T j(max.)
175 °C
Automotive 650 V power Schottky silicon carbide diode
Features
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Remended to PFC applications
- PPAP capable
- ECOPACK pliant ponent
Applications
- On board charger (OBC)
- Solar boost PFC
- Tele power equipment
- Charging stations
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a...