STMicroelectronics STPSC10H065BY-TR
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC10H065BY-TR |
|---|---|
| Datasheet | STPSC10H065BY-TR Download |
| Manufacturer |  STMicroelectronics |
| Description | Schottky silicon carbide diode |
| Buy | Stock & Price |
FEATURES
● AEC-Q101 qualified● No reverse recovery charge in application current range
● Switching behavior independent of temperature
● Recommended to PFC applications
● PPAP capable
● ECOPACK compliant component
APPLICATIONS
● On board charger (OBC)● Solar boost PFC
● Telecom power equipment
● Charging stations
DESCRIPTION
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions. DS12496 - Rev 2 - October 2022 For further information contact your local STMicroelectronics sales office. STPSC10H065BY-TR Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse v...
