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STPSC10H065G2 - high surge silicon carbide power Schottky diode

General Description

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • High forward surge capability.
  • Operating Tj from -40 °C to 175 °C.
  • Power efficient product.
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK2 compliant component.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC10H065G2 Datasheet 650 V, 10 A high surge silicon carbide power Schottky diode A K K A A NC D²PAK HV Product label Product status STPSC10H065G2 Product summary Symbol Value IF(AV) 10 A VRRM 650 V Tj(max.) 175 °C VF(typ.) 1.38 V Features • No or negligible reverse recovery • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -40 °C to 175 °C • Power efficient product • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK2 compliant component Applications • Telecom power supply • Server power supply • Switch mode power supply • DCDC converters • LLC topologies Description This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.