Datasheet Details
| Part number | STPSC10H065G2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 377.74 KB |
| Description | high surge silicon carbide power Schottky diode |
| Datasheet |
 STPSC10H065G2 Datasheet
|
|
|
| Part number | STPSC10H065G2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 377.74 KB |
| Description | high surge silicon carbide power Schottky diode |
| Datasheet |
STPSC10H065G2 Datasheet
|
|
|
|
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.