STMicroelectronics STPSC10H065G2
The STPSC10H065G2 will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.| Part No. | STPSC10H065G2 |
|---|---|
| Datasheet | STPSC10H065G2 Download |
| Manufacturer |  STMicroelectronics |
| Description | high surge silicon carbide power Schottky diode |
| Buy | Stock & Price |
FEATURES
● No or negligible reverse recovery● Switching behavior independent of temperature
● High forward surge capability
● Operating Tj from -40 °C to 175 °C
● Power efficient product
● D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
● ECOPACK2 compliant component
APPLICATIONS
● Telecom power supply● Server power supply
● Switch mode power supply
● DCDC converters
● LLC topologies
DESCRIPTION
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1. DS13663 - Rev 1 - March 2021 For further information contact your local STMicroelectronics sales office.
