Datasheet4U Logo Datasheet4U.com

STPSC16H065C - 650V power Schottky silicon carbide diode

Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a Schottky diode structure with a 650 V rating.

Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • High forward surge capability.

📥 Download Datasheet

Datasheet preview – STPSC16H065C

Datasheet Details

Part number STPSC16H065C
Manufacturer STMicroelectronics
File Size 99.29 KB
Description 650V power Schottky silicon carbide diode
Datasheet download datasheet STPSC16H065C Datasheet
Additional preview pages of the STPSC16H065C datasheet.

📁 Similar Datasheet

  • STPSC1006 - Schottky silicon carbide diode (ST Microelectronics)
  • STPSC1206 - 600V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC406 - 600V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC606 - Schottky Barrier 600 V power Schottky silicon carbide diode (ST Microelectronics)
  • STPSC806 - Schottky Barrier 600 V power Schottky silicon carbide diode (ST Microelectronics)
  • STPS0520M - LOW DROP POWER SCHOTTKY RECTIFIER (ST Microelectronics)
  • STPS0520Z - SCHOTTKY RECTIFIERS (ST Microelectronics)
  • STPS0530Z - SCHOTTKY RECTIFIERS (ST Microelectronics)
  • STPS0540Z - (STPS0540Z / STPS0560Z) SCHOTTKY RECTIFIER (ST Microelectronics)
  • STPS0560Z - SCHOTTKY RECTIFIER (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STPSC16H065C 650 V power Schottky silicon carbide diode $ . $ $ $ . 72$% Features  No or negligible reverse recovery  Switching behavior independent of temperature  High forward surge capability  ECOPACK®2 compliant component Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature.
Published: |