Datasheet Details
| Part number | STPSC20G12-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 487.75 KB |
| Description | 20A power Schottky high surge silicon carbide diode |
| Datasheet |
 STPSC20G12-Y Datasheet
|
|
|
General Description
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier.
It is manufactured using a silicon carbide substrate.
The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Key Features
- AEC-Q101 qualified and PPAP capable.
- None or negligible reverse recovery.
- Switching behavior independent of temperature.
- Robust high voltage periphery.
- Operating Tj from -55 °C to 175 °C.
- Avalanche energy rated.
- ECOPACK2 compliant component.