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STPSC5H12 Datasheet

1200V power Schottky silicon carbide diode

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STPSC5H12
1200 V power Schottky silicon carbide diode
Datasheet - production data
A
K
K
TO-220AC
A
K
K
A
K
DPAK HV 2L
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
ECOPACK®2 compliant
Description
The SiC diode, available in TO-220AC and DPAK
HV, is an ultrahigh performance power Schottky
rectifier. It is manufactured using a silicon carbide
substrate. The wide band-gap material allows the
design of a low VF Schottky diode structure with a
1200 V rating. Due to the Schottky construction,
no recovery is shown at turn-off and ringing
patterns are negligible. The minimal capacitive
turn-off behavior is independent of temperature.
Especially suited for use in PFC and secondary
side applications, this ST SiC diode will boost the
performance in hard switching conditions. This
rectifier will enhance the performance of the
targeted application. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj(max.)
VF(typ.)
5A
1200 V
175 °C
1.35 V
January 2017
DocID030272 Rev 1
This is information on a product in full production.
1/10
www.st.com


STMicroelectronics Electronic Components Datasheet

STPSC5H12 Datasheet

1200V power Schottky silicon carbide diode

No Preview Available !

Characteristics
STPSC5H12
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)
Forward rms current
Average forward current
TC = 160 °C, DC current
TC = 125 °C, DC current
Repetitive peak forward
current
TC = 160 °C, Tj = 175 °C, δ = 0.1
Surge non repetitive
forward current
tp = 10 ms sinusoidal
tp = 10 µs square
Storage temperature range
TC = 25 °C
TC = 150 °C
TC = 25 °C
Operating junction temperature range
1200
20
5
10
19
35
30
210
-65 to +175
-40 to +175
V
A
A
A
A
°C
°C
Symbol
Rth(j-c) Junction to case
Table 3: Thermal parameters
Parameter
Typ. Max. Unit
1.0 1.4 °C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VR = VRRM
IF = 5 A
-
-
-
-
Typ.
2.5
15
1.35
1.75
Max.
30
200
1.50
2.25
Unit
µA
V
Notes:
(1)Pulse test: tp = 10 ms, δ < 2%
(2)Pulse test: tp = 500 µs, δ < 2%
To evaluate the maximum conduction losses, use the following equation:
P = 1.08 x IF(AV) + 0.233 x IF2(RMS)
Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
QCj(1) Total capacitive charge VR = 800 V
- 36 - nC
Cj Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
- 450 -
pF
VR = 800 V, Tc = 25 °C, F = 1 MHz - 29 -
Notes:
(1)Most accurate value for the capacitive charge: () = ∫0 ()
2/10 DocID030272 Rev 1


Part Number STPSC5H12
Description 1200V power Schottky silicon carbide diode
Maker STMicroelectronics
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