STPSC6TH13TI Overview
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.
Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Suited for specific bridge-less topologies
- High forward surge capability
- Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet
- production data
