Datasheet Details
| Part number | STPSC8TH13TI |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 170.55 KB |
| Description | Dual 650V power Schottky silicon carbide diode |
| Datasheet | STPSC8TH13TI-STMicroelectronics.pdf |
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Overview: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series ,QVXODWHG72$%.
| Part number | STPSC8TH13TI |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 170.55 KB |
| Description | Dual 650V power Schottky silicon carbide diode |
| Datasheet | STPSC8TH13TI-STMicroelectronics.pdf |
|
|
|
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Compare STPSC8TH13TI distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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