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STS2DNFS30L Datasheet

N-CHANNEL POWER MOSFET

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STS2DNFS30L
N-CHANNEL 30V - 0.09- 3A SO-8
STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
30 V
< 0.11
SCHOTTKY
IF(AV)
VRRM
1 A 30 V
ID
3A
VF(MAX)
0.46 V
DESCRIPTION
This product associates the latest low voltage
STripFET™ in n-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV)
Average Forward Current
IFSM
Surge Non Repetitive Forward Current
IRSM
dv/dt
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
(•)Pulse width limited by safe operating area
August 2001
TL = 135°C
δ = 0.5
tp = 10 ms
Sinusoidal
tp = 100 µs
Value
30
30
± 15
3
1.9
12
2
Value
30
7
1
45
1
10000
Unit
V
V
V
A
A
A
W
Unit
V
A
A
A
A
V/µs
1/6


STMicroelectronics Electronic Components Datasheet

STS2DNFS30L Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

STS2DNFS30L
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET
Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY Maximum
Tstg Storage Temperature Range
Tl Junction Temperature
(*) Mounted on FR-4 board (Steady State)
62.5
100
-55 to 150
150
°C/W
°C/W
°C
°C
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1 µA
10 µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.5 A
VGS = 4.5V, ID = 1.5 A
Min.
1
Typ.
0.09
0.13
Max.
0.11
0.15
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V , ID = 1.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
2.5
121
45
11
Max.
Unit
S
pF
pF
pF
2/6


Part Number STS2DNFS30L
Description N-CHANNEL POWER MOSFET
Maker ST Microelectronics
Total Page 6 Pages
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