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STMicroelectronics Electronic Components Datasheet

STS3DPFS30L Datasheet

P - CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER

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® STS3DPFS30L
STripFET
P - CHANNEL 30V - 0.13- 3A S0-8
MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
30V <0.16
SCHOTTKY
IF(AV)
VRRM
3A 30V
ID
3A
VF(MAX)
0.51V
DESCRIPTION:
This product associates the latest low voltage
StripFETin p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
IDM()
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
IFSM Surge Non Repetitive Forward Current
TL=125 oC
δ =0.5
tp= 10 ms
Sinusoidal
IRSM Non Repetitive Peak Reverse Current
tp=100 µs
dv/dt Critical Rate Of Rise Of Reverse Voltage
() Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
Value
30
30
± 20
3
1.9
12
2
Value
30
20
3
75
1
10000
Unit
V
V
V
A
A
A
W
Unit
V
A
A
A
A
V/µs
1/5


STMicroelectronics Electronic Components Datasheet

STS3DPFS30L Datasheet

P - CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER

No Preview Available !

STS3DPFS30L
THERMAL DATA
Rthj-amb
Rthj-amb
Tstg
Tj
(*)Thermal Resistance Junction-ambient MOSFET S.O.
Dual Operating
(*) Thermal Resistance Junction-ambientSCHOTTKY
Storage Temperature Range
Maximum
Junction Temperature
(*) mounted on FR-4 board (steady state)
78
62
100
-65 to 150
150
oC/W
oC/W
oC/W
oC
oC
MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage VGS = ± 16 V
Current (VDS = 0)
Min.
30
Typ.
Max.
1
10
±1
Unit
V
µA
µA
µA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.5 A
Resistance
VGS = 4.5V ID = 1.5 A
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
1
3
Typ.
0.13
0.15
Max.
2.5
0.16
0.19
Unit
V
A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Test Conditions
Forward
Transconductance
VDS > ID(on) x RDS(on)max ID =1.5 A
Input Capacitance
VDS = 25 V
Output Capacitance
Reverse
Transfer
Capacitance
f = 1 MHz
VGS = 0
Min.
Typ.
3.5
510
170
55
Max.
Unit
S
pF
pF
pF
2/5


Part Number STS3DPFS30L
Description P - CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER
Maker ST Microelectronics
Total Page 5 Pages
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