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STMicroelectronics Electronic Components Datasheet

STS5PF20V Datasheet

P-channel Power MOSFET

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STS5PF20V
P-CHANNEL 20V - 0.065- 5A SO-8
2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS5PF20V
www.DataSheet4U.com
20 V
< 0.080 (@4.5V)
< 0.10 (@2.5V)
5A
s TYPICAL RDS(on) = 0.065(@4.5V)
s TYPICAL RDS(on) = 0.085(@2.5V)
s ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
SO-8
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely extremely low on-resistance when driven
at 2.5V.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s POWER MANAGEMENT IN CELLULAR
PHONES
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ORDER CODES
PART NUMBER
STS5PF20V
MARKING
S5PF20V
PACKAGE
SO-8
PACKAGING
TAPE & REEL
March 2004
1/8


STMicroelectronics Electronic Components Datasheet

STS5PF20V Datasheet

P-channel Power MOSFET

No Preview Available !

STS5PF20V
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
www.DataSheet4U(.c)oPmulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Value
20
20
±8
5
3.1
20
2.5
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient Max
Tj Max. Operating Junction Temperature
Tstg Storage Temperature
50
–55 to 150
–55 to 150
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (TJ = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
20
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 8V
Max.
1
10
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 2.5 A
VGS = 2.5V, ID = 2.5 A
Min.
0.45
Typ. Max.
0.065
0.085
0.080
0.10
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V , ID = 2.5 A
VDS = 15 V, f = 1 MHz, VGS = 0
Min.
Typ.
6.6
412
179
42.5
Max.
Unit
S
pF
pF
pF
2/8


Part Number STS5PF20V
Description P-channel Power MOSFET
Maker STMicroelectronics
Total Page 8 Pages
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