STS6P3LLH6 Datasheet, STMicroelectronics

Order code VDS RDS(on) max. ID STS6P3LLH6 30 V 30 mΩ 6A
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate dr.

* Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 techno.

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS6P3LLH6 Product summary Order code S.