STS7P4LLF6 Datasheet PDF (P-Channel Power MOSFET) | Download STMicroelectronics STS7P4LLF6

STS7P4LLF6 - P-Channel Power MOSFET

Description

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

Order code VDS STS7P4LLF6 40 V.
Very low on-resistance.
Very low gate charge.
High avalanche ruggedness.
Low gate drive power loss RDS(on) max. ID 20.5 mΩ 7A.

Datasheet Details

Part number	STS7P4LLF6
Manufacturer	STMicroelectronics
File Size	260.10 KB
Description	P-Channel Power MOSFET
Datasheet	STS7P4LLF6 Datasheet
Additional preview pages of the STS7P4LLF6 datasheet.

📁 Similar Datasheet

STS700 - Multifunction Telecommunications Switch (Solid State Optronic)

STS710 - Multifunction Telecommunications Switch (Solid State Optronic)

STS733 - PNP Silicon Transistor (AUK)

STS750 - Multifunction Telecommunications Switch (Solid State)

STS7C4F30L - N-CHANNEL POWER MOSFET (ST Microelectronics)

STS7NF30L - N-Channel MOSFET (VBsemi)

STS-2308-01 - DYNAMIC MICRO SPEAKER (STAR ACOUSTICS)

STS-8857 - Transmissive Switch Assembly (Silonex)

STS01DTP06 - Dual NPN-PNP complementary Bipolar transistor (ST Microelectronics)

STS05DTP03 - Dual NPN-PNP complementary bipolar transistor (ST Microelectronics)

Full PDF Text Transcription

Click to expand full text

STS7P4LLF6 Datasheet P-channel 40 V, 17.5 mΩ typ., 7 A, STripFET F6 Power MOSFET in an SO-8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3) AM01475v4 Features Order code VDS STS7P4LLF6 40 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max. ID 20.5 mΩ 7A Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Published: Mar 27, 2016 |