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STS9P2UH7
P-channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7 Power MOSFET in a SO-8 package
Datasheet - production data
5 8
1
SO-8
4
Figure 1: Internal schematic diagram
Features
Order code STS9P2UH7
VDS 20 V
RDS(on) max 0.0225 Ω @ 4.5 V
ID 9A
Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Ultra logic level
Applications
Switching applications
Description
This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.
Order code STS9P2UH7
Table 1: Device summary
Marking
Package
9L2U
SO-8
Packaging Tape and reel
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.
STS9P2UH7 Datasheet
