• Three-phase gate drivers
– High-voltage rail up to 600 V
– dV/dt transient immunity ±50 V/ns
– Gate driving voltage range from 9 V to 20 V
• Driver current capability:
– 200/350 mA source/sink current @ 25 °C
• 32-bit ARM® Cortex®-M0+ MCU core:
– Up to 64 MHz clock frequency
– 8-Kbyte SRAM with ha.