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STTH3R02 - Ultrafast recovery diode

Description

The STTH3R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

Packaged in DO-201AD, DO-15, and SMC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.

Features

  • Very low conduction losses.
  • Negligible switching losses.
  • Low forward and reverse recovery times.
  • High junction temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AK AA K DO-201AD K DO-15 STTH3R02 STTH3R02Q A K SMC STTH3R02S Features • Very low conduction losses • Negligible switching losses • Low forward and reverse recovery times • High junction temperature Description The STTH3R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-201AD, DO-15, and SMC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. STTH3R02 Ultrafast recovery diode Datasheet - production data Table 1. Device summary IF(AV) 3A VRRM 200 V Tj (max) 175 °C VF (typ) 0.7 V trr (typ) 16 ns April 2014 This is information on a product in full production. DocID12359 Rev 3 1/9 www.st.
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