STTH3006DPI Datasheet | STMicroelectronics

® Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) 30 A VRRM 600 V Tj (max) 150 °C VF (max) 2.4 V IRM (typ.) 6.7 A trr (typ.) 25 ns Features AND BENEFITS s ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS s DESIGNED FOR HIGH d IF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO PETE WITH Si C DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS s INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES s INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON MON OR SEPARATE HEATSINK. s STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN s PACKAGE CAPACITANCE: C=16p F 2 1 DOP3I (insulated) DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode posed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high d IF/dt. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value...