STTH3006TPI Datasheet | STMicroelectronics

.. ® Tandem 600V HYPERFAST RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) 30 A 600 V (in series) 150 °C 2.6 V 6.7 A 2 1 3 1 2 3 Features AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH d IF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO PETE WITH Si C DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON MON OR SEPARATE HEATSINK. MATCHED DIODES FOR TYPICAL PFC APPLICATION WITHOUT NEED FOR VOLTAGE BALANCE NETWORK Package Capacitance: C=16p F - - - - - - TOP-3 (Insulated) DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode posed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high d IF/dt. ABSOLUTE RATINGS (limiting values, for both diodes) Symbol VRRM IF(RMS) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal Value 600 32 180 -65 +150 + 150 Unit V A A °C °C TM: TURBOSWITCH is a trademark of STMicroelectronics June 2003 - Ed: 1A 1/5 THERMAL AND POWER DATA Symbol Rth (j-c) P Parameter Junction to case thermal resistance Conduction power dissipation for both diodes Test conditions Total IF(AV) = 30 A Tc = 20°C δ = 0.5 Value 1.3 100 Unit °C/W W STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol IR - Parameter Reverse leakage current Tests Conditions VR = VRRM Tj = 25°C Tj = 125°C VF - - Forward voltage drop IF = 30 A Tj = 25°C Tj = 125°C Pulse test : - tp = 100 ms, δ < 2 % - - tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 1.8 x IF(AV) + 0.026...