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STMicroelectronics Electronic Components Datasheet

STTH812D Datasheet

Ultrafast recovery Diode

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STTH812D pdf
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STTH812
Ultrafast recovery - 1200 V diode
Main product characteristics
IF(AV)
VRRM
Tj
VF (typ)
trr (typ)
8A
1200 V
175° C
1.25 V
50 ns
Features and benefits
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
Insulated packages:
– TO-220Ins
Electrical insulation = 2500 VRMS
Capacitance = 7 pF
– TO-220FPAC
Electrical insulation = 2000 VRMS
Capacitance = 12 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage current,
and therefore thermal runaway guard band, is an
immediate competitive advantage for this device.
A
A
K
TO-220AC
STTH812D
K
A
NC
D2PAK
STTH812G
Order codes
Part Number
STTH812D
STTH812G
STTH812G-TR
STTH812FP
STTH812DI
K
A
K
TO-220FPAC
STTH812FP
A
K
TO-220Ins
STTH812DI
Marking
STTH812D
STTH812G
STTH812G
STTH812FP
STTH812DI
March 2006
Rev 1
www.st.com
1/11
11


STMicroelectronics Electronic Components Datasheet

STTH812D Datasheet

Ultrafast recovery Diode

No Preview Available !

STTH812D pdf
Characteristics
1 Characteristics
STTH812
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
IFRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
TO-220AC / D2PAK / TO-220FPAC
TO-220AC Ins
TO-220AC / D2PAK Tc = 140° C
TO-220FPAC
Tc = 75° C
TO-220AC Ins
Tc = 115° C
tp = 5 µs, F = 5 kHz square
tp = 10 ms Sinusoidal
Maximum operating junction temperature
1200
30
20
8
100
80
-65 to + 175
175
Unit
V
A
A
A
A
°C
°C
Table 2. Thermal parameters
Symbol
Rth(j-c) Junction to case
Parameter
TO-220AC / D2PAK
TO-220FPAC
TO-220AC Ins
Value
1.9
5.4
3.1
Unit
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
IF = 8 A
Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 1.5 x IF(AV) + 0.05 IF2(RMS)
8
µA
5 50
2.2
1.30 2.0
V
1.25 1.9
2/11


Part Number STTH812D
Description Ultrafast recovery Diode
Maker STMicroelectronics
Total Page 11 Pages
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