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STU10NM65N - N-channel Power MOSFET

Description

This series of devices implements the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • www. DataSheet4U. com Type VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 Ω < 0.48 Ω < 0.48 Ω < 0.48 Ω ID 2 3 3 1 2 STD10NM65N STF10NM65N STP10NM65N STU10NM65N 9A 9 A(1) 9A 9A 1 TO-220 IPAK 1. Limited only by maximum temperature allowed.
  • 3 1 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. TO-220FP DPAK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 Ω < 0.48 Ω < 0.48 Ω < 0.48 Ω ID 2 3 3 1 2 STD10NM65N STF10NM65N STP10NM65N STU10NM65N 9A 9 A(1) 9A 9A 1 TO-220 IPAK 1. Limited only by maximum temperature allowed ■ ■ ■ 3 1 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. TO-220FP DPAK Application ■ Internal schematic diagram Switching applications Description This series of devices implements the second generation of MDmesh™ Technology.
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