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STU10NM60N - N-Channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • TAB Order code VDS RDS(on) max. ID STU10NM60N 600 V 550 mΩ 10 A 3 2 1.
  • 100% avalanche tested.
  • Low input capacitance and gate charge IPAK.
  • Low gate input resistance D(2, TAB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STU10NM60N Datasheet N-channel 600 V, 530 mΩ typ., 10 A MDmesh II Power MOSFET in an IPAK package Features TAB Order code VDS RDS(on) max. ID STU10NM60N 600 V 550 mΩ 10 A 3 2 1 • 100% avalanche tested • Low input capacitance and gate charge IPAK • Low gate input resistance D(2, TAB) Applications • Switching applications G(1) S(3) Description AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.