STU10NM60N Datasheet | STMicroelectronics

N-channel 600 V, 530 mΩ typ., 10 A MDmesh II Power MOSFET in an IPAK package Features Order code RDS(on) max. 600 V 550 mΩ 10 A 2 1 - 100% avalanche tested - Low input capacitance and gate charge IPAK - Low gate input resistance D(2, TAB) Applications - Switching applications G(1) S(3) Description AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high...