Inchange Semiconductor STU10NM60N
N-Channel MOSFET
| Part No. | STU10NM60N |
|---|---|
| Datasheet | STU10NM60N Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With TO-251(IPAK) package●Low input capacitance and gate charge
●Low gate input resistance
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
●Switching applications●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 10 5 A IDM Drain Current-Single Pulsed 32 A PD Total Dissipation @TC=25℃ 70 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 1.79 ℃/W isc website： 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor STU10NM60N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 600 V VGS(th) Gate Threshold Voltage VDS= ±25V; ID=0.25mA 2 4 V RD...