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STMicroelectronics Electronic Components Datasheet

STU16NB50 Datasheet

N-channel Power MOSFET

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® STU16NB50
N-CHANNEL 500V - 0.28- 15.6A-Max220
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST U16 NB5 0
500 V < 0.33 15.6 A
www.DataSheet4U.com
s TYPICAL RDS(on) = 0.28
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ± 30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
23
1
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
Value
Un it
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
500
500
± 30
15.6
9.8
62
160
1.28
V
V
V
A
A
A
W
W /o C
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
4.5
-65 to 150
150
( 1) ISD 16A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
September 1999
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.


STMicroelectronics Electronic Components Datasheet

STU16NB50 Datasheet

N-channel Power MOSFET

No Preview Available !

STU16NB50
THERMAL DATA
Rthj-case
Rth j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.78
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
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EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
15.6
850
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
ID = 250 µA VGS = 0 @ 100oC
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID =7.8 A
Resistance
On Stat e Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
3
T yp.
4
Max.
5
Unit
V
0.28 0.33
15.6
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =7.8 A
Min.
9
T yp.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2850
400
42
3710
520
55
pF
pF
pF
2/6


Part Number STU16NB50
Description N-channel Power MOSFET
Maker STMicroelectronics
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STU16NB50 Datasheet PDF






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