Order code VDS STD3N80K5 STF3N80K5 STP3N80K5 STU3N80K5 800 V RDS(on) max. 3.5 Ω ID 2.5 A PTOT 60 W 20 W 60 W
* Industry’s lowest RDS(on) x area
* Industry.

* Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 t.

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring s.

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