STU40N2LH5 Datasheet | STMicroelectronics

.. STD40N2LH5 STU40N2LH5 N-channel 25 V, 0.01 Ω , 40 A, DPAK, IPAK STrip FET™ V Power MOSFET Preliminary Data Features Type STD40N2LH5 STU40N2LH5 - - - - - VDSS 25 V 25 V RDS(on) max 0.012 Ω 0.0126 Ω ID 40 A 40 A 3 2 1 RDS(on) - Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses DPAK IPAK Application - Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STrip FET™ technology. The lowest available RDS(on)- Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Marking 40N2LH5 40N2LH5 Package DPAK IPAK Packaging Tape and reel Tube Order codes STD40N2LH5 STU40N2LH5 September 2008 Rev 2 1/12 .st....