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STMicroelectronics Electronic Components Datasheet

STU7NA80 Datasheet

N-channel Power MOSFET

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® STU7NA80
N - CHANNEL 800V - 1.3- 6.5A - Max220
FAST POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STU7NA80
800 V
< 1.5
6.5 A
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s TYPICAL RDS(on) = 1.3
s ± 30V GATE TO SOURCE VOLTAGE RATING
s REPETITIVE AVALANCHE TESTED DATA
AT 100 oC
s LOW INTRINSIC CAPACITANCE
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
The Max220TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
PRELIMINARY DATA
123
Max220TM
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
June 1998
Value
800
800
± 30
6.5
4.3
26
145
1.16
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/5


STMicroelectronics Electronic Components Datasheet

STU7NA80 Datasheet

N-channel Power MOSFET

No Preview Available !

STU7NA80
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
TI
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.86
30
0.1
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
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EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
6.5
220
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 100 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ. Max.
250
1000
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 3.5 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2.25
Typ.
3
Max.
3.75
Unit
V
1.3 1.5
6.5 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 3.5 A
Min.
4.5
Typ.
7.2
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1770
190
50
2300
250
70
pF
pF
pF
2/5


Part Number STU7NA80
Description N-channel Power MOSFET
Maker STMicroelectronics
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STU7NA80 Datasheet PDF






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