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STU7N65M2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology.

Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics.

Key Features

  • Order code STP7N65M2 STU7N65M2 VDS 650 V 650 V RDS(on) max 1.15 Ω 1.15 Ω ID 5A 5A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data TAB TAB TO-220 3 2 1 IPAK 123 Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STP7N65M2 STU7N65M2 VDS 650 V 650 V RDS(on) max 1.15 Ω 1.15 Ω ID 5A 5A  Extremely low gate charge  Excellent output capacitance (Coss) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics.