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STMicroelectronics Electronic Components Datasheet

STU7NB90 Datasheet

N-channel Power MOSFET

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STU7NB90
STU7NB90I
N-CHANNEL 900V - 1.1 - 7.3 A Max220/Max220I
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
STU7NB90
900 V < 1.45 7.3 A
www.DataSheet4U.cSoTmU7NB90I
900 V < 1.45 7.3 A
s TYPICAL RDS(on) = 1.1
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
23
1
Max220
Max220I
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2001
Value
Unit
STU7NB90
STU7NB90I
900 V
900 V
±30 V
7.3
7.3 (*)
A
4.6
4.6 (*)
A
29.2
29.2 (*)
A
170 60 W
1.36
0.47 W/°C
4 V/ns
-
2500
V
–65 to 150
°C
150 °C
(1) ISD 7.3 A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Current Limited by Package
1/9


STMicroelectronics Electronic Components Datasheet

STU7NB90 Datasheet

N-channel Power MOSFET

No Preview Available !

STU7NB90 - STU7NB90I
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Max220
0.734
Max220I
2.1
62.5
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
www.DataSheet4U.com EAS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
7.3
600
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
900
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4 A
Min.
2
Typ.
3
1.1
Max.
4
1.45
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 4 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
8
2120
225
23
Max.
Unit
S
pF
pF
pF
2/9


Part Number STU7NB90
Description N-channel Power MOSFET
Maker STMicroelectronics
PDF Download

STU7NB90 Datasheet PDF






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