Datasheet Details
| Part number | STU7NB90 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 338.36 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STU7NB90 Datasheet
|
|
|
| Part number | STU7NB90 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 338.36 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
STU7NB90 Datasheet
|
|
|
|
Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.
N-CHANNEL 900V - 1.1 Ω - 7.3 A Max220/Max220I PowerMesh™ MOSFET TYPE STU7NB90 STU7NB90I www.DataSheet4U.com s s s s s s STU7NB90 STU7NB90I VDSS 900 V 900 V RDS(on) < 1.45 Ω < 1.45 Ω ID 7.3 A 7.3 A TYPICAL RDS(on) = 1.
| Part Number | Description |
|---|---|
| STU7NB90I | N-channel Power MOSFET |
| STU7NB100 | N-channel Power MOSFET |
| STU7N105K5 | N-channel Power MOSFET |
| STU7N60M2 | N-channel Power MOSFET |
| STU7N65M2 | N-channel Power MOSFET |
| STU7N80K5 | N-channel Power MOSFET |
| STU7NA80 | N-channel Power MOSFET |
| STU7NA90 | N-channel Power MOSFET |
| STU7NF25 | N-CHANNEL POWER MOSFET |
| STU7NM60N | N-channel Power MOSFET |