STW12NM60N
Overview
- Limited only by maximum temperature allowed * *
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Internal schematic diagram Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
