STW12NM60N Datasheet | STMicroelectronics

Features .. Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω 3 12 STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N 10A 10A 10A(1) 10A 10A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed - - - 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Internal schematic diagram Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Application - Switching application Order codes Part number STB12NM60N STB12NM60N-1 STF12NM60N STP12NM60N STW12NM60N Marking B12NM60N B12NM60N F12NM60N P12NM60N W12NM60N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube April 2007 Rev 2 1/18 .st. 18 Contents STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Contents 1 2 Electrical ratings - - - - - - - - . . . . 3 Electrical characteristics...