Datasheet Summary
STP13N60M2, STU13N60M2, STW13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220, IPAK and TO-247 packages
- production data
3 2 1
TO-220
IPAK
2 1
3 2 1
TO-247
Figure 1. Internal schematic diagram , TAB
Features
Order codes VDS @ TJmax RDS(on) max ID
STP13N60M2 STU13N60M2
650 V
0.38 Ω
11 A
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low...