STW13N60M2
Features
Order codes VDS @ TJmax RDS(on) max ID
STP13N60M2 STU13N60M2
650 V
0.38 Ω
11 A
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Order codes STP13N60M2 STU13N60M2 STW13N60M2
Table 1. Device summary
Marking
Package
13N60M2
TO-220 IPAK
TO-247
February 2014
This is information on a product in full production.
Doc ID023937 Rev 5
Packaging Tube
1/18
.st.
Contents
Contents
STP13N60M2, STU13N60M2, STW13N60M2
1 Electrical ratings
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