STW14NM65N
Overview
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge.
- Limited only by maximum temperature allowed * *
- 2 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 TO-220FP
