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STW16NB60 - N-channel Power MOSFET

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet Details

Part number STW16NB60
Manufacturer STMicroelectronics
File Size 205.89 KB
Description N-channel Power MOSFET
Datasheet download datasheet STW16NB60 Datasheet
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STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh™ MOSFET TYPE STW16NB60 www.DataSheet4U.com s TYPICAL s s s s VDSS 600V RDS(on) < 0.35 Ω ID 16 A RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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