www.DataSheet4U.com Type VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω ID 1 3 3 12 STB16NM50N STI16NM50N STF16NM50N ST.

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Po.

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. .

STW16N65M5

STW16NA40

STW16NA40FI

STW16NA60

STW16NB60

STW16NK60Z

STW160N75F3

STW10N105K5

STW10N95K5

STW10NA50

STW10NB60

STW10NC60

STW10NC70Z

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