Datasheet Summary
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N-CHANNEL 200V
- 0.062 Ω
- 34A TO-247 PowerMESH™ MOSFET
Table 1. General Features
Type STW34NB20 VDSS 200 V RDS(on) < 0.075 Ω ID 34 A
Figure 1. Package
Features
SUMMARY
- TYPICAL RDS(on) = 0.062 Ω
- -
- -
EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
TO-247
1 3 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt...