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STW34NM60N - Power MOSFET

General Description

These devices are made using the second generation of MDmeshTM technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STF34NM60N STP34NM60N STW34NM60N.
  • VDSS 600 V 600 V 600 V RDS(on) max. 0.105 Ω 0.105 Ω 0.105 Ω ID 29 A 29 A 29 A PTOT 40 W 210 W 210 W 2 1 3 1 3 2 TO-247 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 TO-220FP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DataSheet.in STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 Ω , 29 A MDmesh™ II Power MOSFET TO-220, TO-247, TO-220FP Preliminary data Features Type STF34NM60N STP34NM60N STW34NM60N ■ ■ ■ VDSS 600 V 600 V 600 V RDS(on) max. 0.105 Ω 0.105 Ω 0.105 Ω ID 29 A 29 A 29 A PTOT 40 W 210 W 210 W 2 1 3 1 3 2 TO-247 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.