STW34NM60N Description
These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STW34NM60N Key Features
- VDSS 600 V 600 V 600 V
- Switching