STW34NM60N Overview
isc N-Channel MOSFET Transistor STW34NM60N FEATURES ·Drain Current –ID=31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application
STW34NM60N Key Features
- Drain Current -ID=31.5A@ TC=25℃ -Drain Source Voltage

