Datasheet4U Logo Datasheet4U.com

STW34NM60N - N-Channel MOSFET

Key Features

  • Drain Current.
  • ID=31.5A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STW34NM60N Power MOSFET ST Microelectronics
STW34NM60ND N-CHANNEL POWER MOSFET STMicroelectronics
STW34N65M5 N-channel Power MOSFET STMicroelectronics
STW34NB20 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ST Microelectronics
STW3040 Transistors ST Microelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
STW34NM60ND N-Channel MOSFET
STW34N65M5 N-Channel MOSFET
STW30N65M5 N-Channel MOSFET
STW31N65M5 N-Channel MOSFET
STW32N65M5 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor STW34NM60N FEATURES ·Drain Current –ID=31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 V ±25 V ID Drain Current-Continuous 31.5 A IDM Drain Current-Single Pluse 126 A PD Total Dissipation @TC=25℃ 250 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.