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STW35N60DM2 - N-channel Power MOSFET

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Features

  • Order code VDS STW35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Datasheet preview – STW35N60DM2

Datasheet Details

Part number STW35N60DM2
Manufacturer STMicroelectronics
File Size 568.71 KB
Description N-channel Power MOSFET
Datasheet download datasheet STW35N60DM2 Datasheet
Additional preview pages of the STW35N60DM2 datasheet.

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Full PDF Text Transcription

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STW35N60DM2 N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code VDS STW35N60DM2 600 V RDS(on) max. 0.110 Ω ID PTOT 28 A 210 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
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